![]() The PMOS transistor, on the other hand, consists of a high density of B ions at its source and drain and a moderate density of P ions at its body. ![]() As can be seen from the figures, the source and drain terminals of the NMOS transistor are heavily doped with donator ions, such as phosphorous (P) or arsenic (As), whereas, its body is moderately doped with boron (B) acceptor ions. Illustrate the symbols and cross-sections of the NMOS and PMOS transistors. A typical microchip consists of arrays of negative and positive MOSFETs, which are commonly denoted as the NMOS and PMOS transistors, respectively. Today, microchips are built from the solid-state metal-oxide-semiconductor field-effect transistors (MOSFETs). The inexorable widespread application of solid-state transistors in electronic circuits has triggered a dramatic revolution in the electronic industries. Hence, the solid-state transistor swiftly replaced its predecessor as the predominant building block for electronic devices. In comparison with the thermionic triode (which is colloquially known as the vacuum tube), the solid-state transistor is much smaller in size, consumes much lower power, operates at a relatively lower temperature, and exhibits significantly faster response time. More than half a century has elapsed since the three physicists from the AT&T Bell Laboratories-Brattain, Bardeen, and Shockley-invented the first solid-state transistor in December 1947.
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